july 2011 ?2011 fairchild semiconductor corporation FDS86106 rev. c2 www.fairchildsemi.com 1 FDS86106 n-channel power trench ? mosfet FDS86106 n-channel power trench ? mosfet 100 v, 3.4 a, 105 m features ? max r ds(on) = 105 m at v gs = 10 v, i d = 3.4 a ? max r ds(on) = 171 m at v gs = 6 v, i d = 2.7 a ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability in a widely used surface mount package ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been optimized for r ds(on) , switching performance and ruggedness . applications ? synchronous rectifier ? primary switch for bridge topology mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous 3.4 a -pulsed 15 e as single pulse avalanche energy (note 3) 13 mj p d power dissipation t a = 25 c (note 1a) 5.0 w power dissipation t a = 25 c (note 1b) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 2.5 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDS86106 FDS86106 so-8 13 ?? 12 mm 2500 units so-8 d d d d s s s g pin 1 g s s s d d d d 5 6 7 8 3 2 1 4
FDS86106 n-channel power trench ? mosfet www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDS86106 rev. c2 electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0 v 100 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 67 mv/ c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 p a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2 2.9 4 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -9 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 3.4 a 83 105 m : v gs = 6 v, i d = 2.7 a 115 171 v gs = 10 v, i d = 3.4 a, t j = 125 c 143 177 g fs forward transconductance v ds = 10 v, i d = 3.4 a 6 s dynamic characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1 mhz 156 208 pf c oss output capacitance 47 62 pf c rss reverse transfer capacitance 2 3 pf r g gate resistance 0.9 : switching characteristics t d(on) turn-on delay time v dd = 50 v, i d = 3.4 a, v gs = 10 v, r gen = 6 : 5 10 ns t r rise time 2 10 ns t d(off) turn-off delay time 8 15 ns t f fall time 2 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 50 v i d = 3.4 a 3 4 nc total gate charge v gs = 0 v to 5 v 1.6 2.3 nc q gs total gate charge 0.8 nc q gd gate to drain ?miller? charge 0.8 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 3.4 a (note 2) 0.86 1.3 v v gs = 0 v, i s = 2.1 a (note 2) 0.83 1.2 t rr reverse recovery time i f = 3.4 a, di/dt = 100 a/ p s 34 54 ns q rr reverse recovery charge 22 35 nc notes: 1. r t ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0 %. 3. starting t j = 25 o c; n-ch: l = 3 mh, i as = 3 a, v dd = 100 v, v gs = 10 v. a) 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b) 125 c/w when mounted on a minimum pad.
FDS86106 n-channel power trench ? mosfet www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDS86106 rev. c2 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 3 6 9 12 15 v gs = 7 v v gs = 5.5 v v gs = 10 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 5 v v gs = 6 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 03691215 0 1 2 3 4 5 v gs = 5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 7 v v gs = 5.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 3.4 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0 100 200 300 400 500 t j = 125 o c i d = 3.4 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 24681 0 0 3 6 9 12 15 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS86106 n-channel power trench ? mosfet www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDS86106 rev. c2 figure 7. 01234 0 2 4 6 8 10 i d = 3.4 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 300 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 2 1 2 3 4 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 1 2 3 4 v gs = 6 v r t ja = 50 o c/w v gs = 10 v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n c u r r e n t v s a m b i e n t t e m p e r a t u r e figure 11. 0.01 0.1 1 10 100 600 0.01 0.1 1 10 30 10 s 100us 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c fo rw ard bi as safe operating area figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 400 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDS86106 n-channel power trench ? mosfet www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDS86106 rev. c2 figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
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